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Wafer-Scale Manufacturing of Bulk Shape-Memory-Alloy Microactuators Based on Adhesive Bonding of Titanium-Nickel Sheets to Structured Silicon Wafers

机译:基于钛镍片与结构化硅片的胶粘结合技术,大批量制造形状记忆合金微致动器的晶片规模。

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摘要

This paper presents a concept for the wafer-scale manufacturing of microactuators based on the adhesive bonding of bulk shape-memory-alloy (SMA) sheets to silicon microstructures. Wafer-scale integration of a cold-state deformation mechanism is provided by the deposition of stressed films onto the SMA sheet. A concept for heating of the SMA by Joule heating through a resistive heater layer is presented. Critical fabrication issues were investigated, including the cold-state deformation, the bonding scheme and related stresses, and the titanium-nickel (TiNi) sheet patterning. Novel methods for the transfer stamping of adhesive and for the handling of the thin TiNi sheets were developed, based on the use of standard dicing blue tape. First demonstrator TiNi cantilevers, wafer-level adhesively bonded on a microstructured silicon substrate, were successfully fabricated and evaluated. Intrinsically stressed silicon dioxide and silicon nitride were deposited using plasma-enhanced chemical vapor deposition to deform the cantilevers in the cold state. Tip deflections for 2.5-mm-long cantilevers in cold/hot state of 250/70 and 125/28 mu m were obtained using silicon dioxide and silicon nitride, respectively. The bond strength proved to be stronger than the force created by the 2.5-mm-long TiNi cantilever and showed no degradation after more than 700 temperature cycles. The shape-memory behavior of the TiNi is maintained during the integration process.
机译:本文提出了一种基于块状形状记忆合金(SMA)片与硅微结构的粘合剂粘结的微型致动器的晶圆级制造概念。通过将应力膜沉积到SMA片材上来提供冷态变形机制的晶片级集成。提出了通过焦耳加热通过电阻加热器层来加热SMA的概念。研究了关键的制造问题,包括冷态变形,粘结方案和相关应力,以及钛镍(TiNi)板的图案。基于使用标准切割蓝带,开发了用于转移粘合剂和处理TiNi薄板的新方法。成功地制造并评估了第一个演示器TiNi悬臂,该悬臂是胶粘在微结构硅衬底上的晶片级的。使用等离子增强化学气相沉积法沉积固有应力的二氧化硅和氮化硅,以使悬臂在冷态下变形。使用二氧化硅和氮化硅分别获得了250/70和125/28μm的冷/热状态下2.5毫米长悬臂的尖端挠度。事实证明,结合强度比2.5毫米长的TiNi悬臂梁产生的力强,并且在超过700个温度循环后仍未发生降解。在集成过程中,TiNi的形状记忆行为得以保持。

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